대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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- Pages.2300-2302
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- 2005
QW-FET 구조를 가진 고성능 평판형 광검출기의 제작 및 특성평가
Fabrication and Characterization of High Performance Planar Photodetectors on QW-FET Wafer
초록
Metal-Semiconductor-Metal type photodetector was fabricated with AlGaAs/InGaAs Quantum Well FET structures using simplified processing steps. The DC and RF responses were measured by 850nm wavelength injection laser. A DC responsivity in the quasisaturated regime was 0.45 A/W in CW measurements, and a bandwidth measured using a 850nm 40 ps pulsed laser was 16GHz. An electrical equivalent circuit model was extracted from measured S-parameter.
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