Proceedings of the Korean Magnestics Society Conference (한국자기학회:학술대회 개요집)
- 2005.12a
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- Pages.216-216
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- 2005
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- 2233-9485(pISSN)
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- 2233-9574(eISSN)
Switching Issues for High Density MRAM
- Kim K. (Nano Devices Lab, Samsung Advanced Institute of Technology) ;
- Cho Y.J. (Nano Fabrication Center, Samsung Advanced Institute of Technology) ;
- Hwang I.J. (Nano Fabrication Center, Samsung Advanced Institute of Technology) ;
- Kim K.S. (Materials Science and Engineering, Gwangju institute of Science & Technology) ;
- Jeong W.C. (Advanced Technology Development Team, Semiconductor R&D Division) ;
- Lee J.E. (Process Development Team, Semiconductor R&D Division) ;
- Kim T W. (Nano Devices Lab, Samsung Advanced Institute of Technology)
- Published : 2005.12.01