Analytical Electron Microscopy and Atomic Force Microscopy Reveal a Physical Mechanism of Silicon-Induced Rice Resistance to Blast

Locations of silicon accumulation in rice leaves and its possible association with resistance to rice blast were investigated by analytical electron microscopy and atomic force microscopy. A blast-susceptible cultivar, Jinmi, and partially resistant cultivars, Hwaseong and Suwon345, were grown under a hydroponic culture system with modified Yoshida's nutrient solution. Electron-dense silicon layers were frequently found beneath the cuticle in epidermal cell walls of silicon-treated plants. Increasing levels of silicon were detected in the outer regions of epidermal cell walls. Silicon was present mainly in epidermal cell walls, middle lamella, and Intercellular spaces within subepidermal tissues. Furthermore, silicon was prevalent throughout the leaf surface with relatively small deposition on stomatal guard cells in silicon-treated plants. Force-distance curve measurements revealed relative hardness and smaller adhesion force in silicon-treated plants (18.65 uN) than control plants (28.39 uN). Moreover, force modulation microscopy showed higher mean height values of elastic Images In silicon-treated plants(1.26 V) than in control plants (0.44 V), implying the increased leaf hardness by silicon treatment. These results strongly suggest that silicon-induced cell wall fortification of rice leaves may be closely associated with enhanced host resistance to blast.