한국신재생에너지학회:학술대회논문집
- 한국신재생에너지학회 2005년도 제17회 워크샵 및 추계학술대회
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- Pages.561-566
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- 2005
열선 CVD 증착 다결정 실리콘에서 전하를 띈 클러스터의 생성 및 증착
Generation of Charged Clusters and their Deposition in Polycrystalline Silicon Hot-Wire Chemical Vapor Deposition
- 발행 : 2005.11.11
초록
Polycrystalline silicon films were deposited using hot wire CVD (HWCVD). The deposition of silicon thin films was approached by the theory of charged clusters (TCC). The TCC states that thin films grow by self-assembly of charged clusters or nanoparticles that have nucleated in the gas phase during the normal thin film process. Negatively charged clusters of a few nanometer in size were captured on a transmission electron microscopy (TEM) grid and observed by TEM. The negatively charged clusters are believed to have been generated by ion-induced nucleation on negative ions, which are produced by negative surface ionization on a tungsten hot wire. The electric current on the substrate carried by the negatively charged clusters during deposition was measured to be approximately
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