Electrical Characteristics of GaAs MESFET's Considering Channel Charge

GaAs MESFET의 채널전하에 의한 전기적 특성해석

In this paper, we examined channel charge which occurs in electron accumulation after electron velocity saturation. Generally, short gate GaAs MESFET show, saturated electron velocity leading to current satulation. When electron velocity is saturated, deletion layer is still open channel and it plays a key role in deciding saturation current mode we proposed channel charge model in channel after electron velocity saturation.