Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.11a
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- Pages.55-56
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- 2005
Characterization of Phosphorus Doped ZnO Thin Films grown by Pulsed Laser Deposition Method
펄스 레이저 증착법에 의해 증착된 Phosphorus 도핑된 ZnO 박막의 특성 분석
- Lim, Sung-Hoon (Yonsei University) ;
- Kang, Hong-Seong (Yonsei University) ;
- Kim, Gun-Hee (Yonsei University) ;
- Chang, Hyun-Woo (Yonsei University) ;
- Lee, Sang-Yeol (Yonsei University)
- Published : 2005.11.10
Abstract
The properties of phosphorus doped ZnO thin films deposited on (001) sapphire substrates by pulsed laser deposition (PLD) were investigated depending on various deposition conditions. The phosphorus (P) doped ZnO target was composed of ZnO + x wt% Al (x=1, 3, 5). The structural, electrical and optical properties of the ZnO thin films were measured by X-ray diffraction (XRD), Hall measurements and photoluminescence (PL). As the deposition temperature optimized, the electrical properties of the phosphorus doped ZnO (ZnO:P) layer showed a electron concentration of