Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.11a
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- Pages.78-79
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- 2005
Terahertz Emission by LT-GaAs
LT-GaAs에서 테라헬쯔파 방출
Abstract
We report on optically excited terahertz (THz) omission from low-temperature (LT) grown GaAs. We have used 70 fs titanium-sapphire laser pulses with wavelengths at 800 nm to generate THz radiation pulses. The LT-GaAs layers are grown on semi-insulating GaAs substrates with GaAs buffer layer by molecular beam epitaxy (MBE). The THz emission from the LT-GaAs surface is strong and does not show any significant variation in the strength of the THz emission over several different angles between the polarization of the excitation laser pulse and the crystallographic orientation of the LT-GaAs.