Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.11a
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- Pages.128-129
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- 2005
Formation of Nano-crystal using Si-rich thin film for Non Volatile Memory Device Application
비휘발성 메모리 소자 응용을 위한 Si-rich 박막을 사용한 Nano-crystal 형성
-
Jang, Kyung-Soo
(Sungkyunkwan Univ.)
;
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Jung, Sung-Wook
(Sungkyunkwan Univ.)
;
- Kim, Hyun-Min (Sungkyunkwan Univ.) ;
- Hwang, Hyung-Sun (Sungkyunkwan Univ.) ;
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Choi, Seok-Ho
(KyungHee Univ.)
;
-
Yi, Jun-Sin
(Sungkyunkwan Univ.)
- Published : 2005.11.10
Abstract
In this research, non-volatile memory effects and nano-crystal creation have been investigated in SiNx containing Si nano-crystals (Si-nc) produced by ICP-CVD and rapid thermal annealing. The quantum dots were created during rapid thermal annealing of Si-rich SiNx thin films. The quantum dot creation was analyzed with photoluminescence spectra, and in case of Si-rich SiNx, it is conformed that the quantum dots are formed easily at 750