Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.11a
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- Pages.252-253
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- 2005
The effects of As addition on the transport property of a-Se:As films using the moving photo-carrier grating technique
- Park, Chang-Hee (School of Computer Aided Science, Inje University) ;
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Lee, Kwang-Sei
(School of Computer Aided Science, Inje University)
;
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Kim, Jeong-Bae
(School of Computer Aided Science, Inje University)
;
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Kim, Jae-Hyung
(School of Computer Aided Science, Inje University)
- Published : 2005.11.10
Abstract
The effects of As addition in amorphous selenium (a-Se) films on the carrier mobilities and the recombination lifetime have been studied using the moving photo-carrier grating (MPG) measurements. The electron and hole mobility, and recombination lifetime of a-Se films with arsenic (As) additions up to 1% have been obtained. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density from shallow traps.