Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.11a
- /
- Pages.360-361
- /
- 2005
Monitoring of Break-in time in Si wafer polishing
실리콘 웨이퍼 연마에서의 Break-in 모니터링
- Jeong, Suk-Hoon (Department of Precision & Mechanical Engineering in PNU) ;
-
Park, Boum-Young
(Department of Precision & Mechanical Engineering in PNU)
;
- Park, Sung-Min (Department of Precision & Mechanical Engineering in PNU) ;
-
Lee, Sang-Jik
(Department of Precision & Mechanical Engineering in PNU)
;
-
Lee, Hyun-Seop
(Department of Precision & Mechanical Engineering in PNU)
;
-
Jeong, Hae-Do
(School of Mechanical Engineering in PNU)
;
- Bae, So-Ik (LG-Siltron Leading Project Team) ;
- Choi, Eun-Suck (LG-Siltron Leading Project Team) ;
- Baeck, Kyoung-Lock (LG-Siltron Leading Project Team)
- 정석훈 (부산대학교 정밀기계공학과) ;
-
박범영
(부산대학교 정밀기계공학과)
;
- 박성민 (부산대학교 정밀기계공학과) ;
-
이상직
(부산대학교 정밀기계공학과)
;
-
이현섭
(부산대학교 정밀기계공학과)
;
-
정해도
(부산대학교 기계공학부)
;
- 배소익 (LG-Siltron 선행연구팀) ;
- 최은석 (LG-Siltron 선행연구팀) ;
- 백경록 (LG-Siltron 선행연구팀)
- Published : 2005.11.10
Abstract
Rapid progress in IC fabrication technology has strong demand in polishing of silicon wafer to meet the tight specification of nanotopography and surface roughness. One of the important issues in Si CMP is the stabilization of polishing pad. If a polishing pad is not stabilized before main Si wafer polishing process, good polishing result can not be expected. Therefore, new pad must be subjected into break-in process using dummy wafers for a certain period of time to enhance its performance. After the break-in process, the main Si wafer polishing process must be performed. In this study, the characteristics of break-in process were investigated in Si wafer polishing. Viscoelastic behavior, temperature variation of pad and friction were measured to evaluate the break-in phenomenon. Also, it is found that the characteristic of the break-in seems to be related to viscoelastic behavior of pad.