Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Nanotribological Behavior of Cu Oxide and Silicon Tip

Cu Oxide와 Silicon Tip 사이의 나노트라이볼러지 작용

  • Kim, Tae-Gon (Division of Materials and Chemical Engineering, Hanyang University) ;
  • Kim, In-Kwon (Division of Materials and Chemical Engineering, Hanyang University) ;
  • Park, Jin-Goo (Division of Materials and Chemical Engineering, Hanyang University)
  • 김태곤 (한양대학교 재료화학공학부) ;
  • 김인권 (한양대학교 재료화학공학부) ;
  • 박진구 (한양대학교 재료화학공학부)
  • Published : 2005.11.10
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Abstract

This paper report nanotribological behavior between Si tip and Cu wafer surfaces which was treated various concentration of $H_2O_2$. This experimental approach has proven atomic level insight into Cu CMP. It has been used to study interfacial friction and adhesion force between Si tip and Cu wafer surfaces in air by atomic force microscopy (AFM). Adhesion force of Cu surfaces which was pre-cleaned in diluted HF solution was lager than Cu oxide surfaces. Adhesion force of Cu oxide surface was saturated around 7 nN. Slope of normal force vs lateral signal was increased as increasing concentration of $H_2O_2$ and it was saturated around 24. Friction force of Cu oxide was lager than Cu.

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