Proceedings of the Korean Institute of Information and Commucation Sciences Conference (한국정보통신학회:학술대회논문집)

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
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Graphoepitaxy of ZnO thin films by Zn evaporation

Graphoepitaxy법을 이용하여 SiO$_2$ 기판 위에 제작한 ZnO 박막의 특성에 관한 연구

  • Kim, Gwang-Hui (Korea Maritime University, Major of Semiconductor Physics) ;
  • Choi, Seok-Cheol (Korea Maritime University, Major of Semiconductor Physics) ;
  • Lee, Tae-Hun (Korea Maritime University, Major of Semiconductor Physics) ;
  • Jung, Jin-U (Korea Maritime University, Major of Semiconductor Physics) ;
  • Park, Seung-Hwan (Korea Maritime University, Major of Semiconductor Physics) ;
  • Jung, Mi-Na (Korea Maritime University, Major of Semiconductor Physics) ;
  • Jung, Myeong-Hun (Korea Maritime University, Major of Semiconductor Physics) ;
  • Yang, Min (Korea Maritime University, Major of Semiconductor Physics) ;
  • Yao, Takafumi (Institute for Materials Research, Tohoku University) ;
  • Chang, Ji-Ho (Korea Maritime University, Major of Semiconductor Physics)
  • 김광희 (한국해양대학교 반도체 물리전공) ;
  • 최석철 (한국해양대학교 반도체 물리전공) ;
  • 이태훈 (한국해양대학교 반도체 물리전공) ;
  • 정진우 (한국해양대학교 반도체 물리전공) ;
  • 박승환 (한국해양대학교 반도체 물리전공) ;
  • 정미나 (한국해양대학교 반도체 물리전공) ;
  • 정명훈 (한국해양대학교 반도체 물리전공) ;
  • 양민 (한국해양대학교 반도체 물리전공) ;
  • ;
  • 장지호 (한국해양대학교 반도체 물리전공)
  • Published : 2005.05.27
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Abstract

The feasibility of graphoepitaxial growth of compound semiconductors has been studied. Two kinds of substrates were prepared; one is smooth substrate, the other one is a periodic structured substrate. ZnO film was formed on both substrates by thermal evaporation of elemental Zn and natural oxidation of the deposited Zn. Thermal treatment was performed to improve the crystal quality and to investigate the effect of the periodic structure. Atomic force microscopy (AFM) and photoluminescence (PL) were used to characterize the samples. As a result, the improvement of crystallinity as annealing temperature increase, has been observed from both samples. The samples, annealed at 800 $^{\circ}$C, show the best crystal quality in terms of PL linewidth. Also the sample grown on grating structure shows better crystal quality than the sample grown on flat substrate. It implies that the periodic structure affects the crystallinity of the films, and the graphoepitaxy of compound semiconductors is possible by using appropriate surface structure.

Grating 이 형성된 SiO$_2$ 기판상에 ZnO 박막을 graphoepitaxy 법으로 형성시킬 것을 제안하고 그 가능성을 고찰하였다. Si(100) 기판상에 노광작업(photolithograpy)을 이용하여 요철구조를 형성시킨 다음 자연산화를 시켜서 SiO$_2$ 기판을 제작하였고, 제작된 요철구조 위에 열증착 법으로 Zn 를 증착 시킨 후 이를 산화 시켜서 ZnO 박막을 형성 시켰다. 또한 열처리에 의한 결정성의 변화를 관찰하기 위하여 700 ${\sim}$ 900 $^{\circ}C$에서 열처리를 하였다. 제작된 시료는 Atomic Force Microscopy (AFM)로 표면을 관찰하였으며, Photoluminescence (PL) 을 이용하여 결정성의 변화를 관찰하였다.

Keywords