한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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High Performance Poly-Si TFT (${\mu}>290cm^2/Vsec$) Direct Fabricated on Plastic Substrate below $170^{\circ}C$

  • Kwon, Jang-Yeon (Samsung Advanced Institute of Technology (SAIT)) ;
  • Kim, Do-Young (Samsung Advanced Institute of Technology (SAIT)) ;
  • Jung, Ji-Sim (Samsung Advanced Institute of Technology (SAIT)) ;
  • Kim, Jong-Man (Samsung Advanced Institute of Technology (SAIT)) ;
  • Lim, Hyuck (Samsung Advanced Institute of Technology (SAIT)) ;
  • Park, Kyung-Bae (Samsung Advanced Institute of Technology (SAIT)) ;
  • Cho, Hans-S (Samsung Advanced Institute of Technology (SAIT)) ;
  • Zhang, Xiaoxin (Samsung Advanced Institute of Technology (SAIT)) ;
  • Yin, Huaxiang (Samsung Advanced Institute of Technology (SAIT)) ;
  • Xianyu, Wenxu (Samsung Advanced Institute of Technology (SAIT)) ;
  • Noguchi, Takashi (Samsung Advanced Institute of Technology (SAIT), Sungkyunkwan University)
  • Published : 2005.07.19
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Abstract

We present the characterization of poly-Si TFT fabricated below on Plastic Substrate below $170^{\circ}C$ on plastic substrate using excimer laser crystallization of Xe sputtered Si films. Gate insulator with a breakdown field exceeding 8 MV/cm was deposited by using inductively coupled plasma CVD. Finally, we successfully fabricate TFT with a electron field-effect mobility value greater than $290\;cm^2/Vsec$.

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