한국정보디스플레이학회:학술대회논문집

한국정보디스플레이학회 (The Korean Infomation Display Society)
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Characteristics of Poly-Si TFTs Fabricated on Flexible Substrates using Sputter Deposited a-Si Films

  • Kim, Y.H. (Information Display Research Center, Korea Electronics Technology Institute) ;
  • Moon, D.G. (Information Display Research Center, Korea Electronics Technology Institute) ;
  • Kim, W.K. (Information Display Research Center, Korea Electronics Technology Institute) ;
  • Han, J.I. (Information Display Research Center, Korea Electronics Technology Institute)
  • 발행 : 2005.07.19
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초록

The characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated using sputter deposited amorphous silicon (a-Si) precursor films are investigated. The a-Si films were deposited on flexible polymer substrates using argon-helium mixture gases to minimize the argon incorporation into the film. The precursor films were then laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated pMOS TFT showed field-effect mobility of $32.4cm^2/V{\cdot}s$ and on/off ratio of $10^6$.

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