한국정보디스플레이학회:학술대회논문집
- 2005.07a
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- Pages.303-306
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- 2005
New Doping Process for low temperature poly silicon TFT
- Park, Kyung-Min (LTPS Team, LCD Business, Samsung Electronics Co.) ;
- You, Chun-Gi (LTPS Team, LCD Business, Samsung Electronics Co.) ;
- Kim, Chi-Woo (LTPS Team, LCD Business, Samsung Electronics Co.)
- Published : 2005.07.19
Abstract
We report the self-aligned low temperature poly silicon (LTPS) TFT process using simple doping process. In conventional LTPS-TFT, the Lightly Doped Drain (LDD) doping and source/drain doping are processed separately by aligning the gate with the source and drain during the gate lithography step. This ne w process not only fabricates fully self-aligned low temperature poly silicon TFTs with symmetric LDD structure but also simplifies the process flow with combined source/drain doping and LDD doping in one step. LDD doping process can be achieved using only source/drain doping process according to the new structure. In this paper, the TFT characteristics of NMOS and PMOS using the new doping process will be discussed.
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