Liquid Crystal Alignment on the SiC Thin Film by the Ion Beam Exposure Method

  • Moon, Hyun-Chan (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Kang, Hyung-Ku (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Park, Chang-Joon (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Hwang, Jeoung-Yeon (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Seo, Dae-Shik (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Lim, Sung-Hoon (Advanced Display Research Center, Kyunghee University) ;
  • Jang, Jin (Advanced Display Research Center, Kyunghee University)
  • 발행 : 2005.07.19

초록

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of the SiC (Silicon Carbide) thin film. The SiC thin film exhibits good chemical and thermal stability. The good thermal and chemical stability makes SiC an attractive candidate for electronic applications. A vertical alignment of nematic liquid crystal by ion beam exposure on the SiC thin film surface was achieved. The about $87^{\circ}$ of stable pretilt angle was achieved at the range from $30^{\circ}$ to $45^{\circ}$ of incident angle. The good LC alignment is main-tained by the ion beam alignment method on the SiC thin film surface at high annealing temperatures up to 300.

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