Topics in TFT device physics and modelling

  • Migliorato, P. (Cambridge University Department of Engineering, Cambridge)
  • Published : 2005.07.19

Abstract

This paper contains a review of methods to analise static and dynamic properties of trap states in TFTs. The Gap Density of States is extracted from C-V and I-V characteristics. Switch on transients and small signal ac measurements are used in conjunction with simulation and an analytic model to extract traps dynamic parameters.

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