한국정보디스플레이학회:학술대회논문집
- 2005.07b
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- Pages.929-935
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- 2005
Topics in TFT device physics and modelling
- Migliorato, P. (Cambridge University Department of Engineering, Cambridge)
- Published : 2005.07.19
Abstract
This paper contains a review of methods to analise static and dynamic properties of trap states in TFTs. The Gap Density of States is extracted from C-V and I-V characteristics. Switch on transients and small signal ac measurements are used in conjunction with simulation and an analytic model to extract traps dynamic parameters.
Keywords