한국정보디스플레이학회:학술대회논문집
- 2005.07b
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- Pages.940-943
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- 2005
Characteristics of a-Si:H TFTs with Silicon Oxide as Passivation Layer
- Chae, Jung-Hun (LCD R&D Center, LG.Philips LCD) ;
- Jung, Young-Sup (LCD R&D Center, LG.Philips LCD) ;
- Kim, Jong-Il (LCD R&D Center, LG.Philips LCD) ;
- Kim, Chang-Dong (LCD R&D Center, LG.Philips LCD) ;
- Chung, In-Jae (LCD R&D Center, LG.Philips LCD)
- Published : 2005.07.19
Abstract
The characteristics of a-Si:H TFTs with silicon oxide as passivation layer were reported. It was studied that the insulating characteristics and step coverage characteristics of low temperature silicon oxide before applying to a-Si:H TFT fabrications. With the optimum deposition conditions considering electrical and deposition characteristics, low temperature silicon oxide was applied to a-Si:H TFTs. The changes in characteristics of a-Si:H TFTs were analyzed after replacing silicon nitride passivation layer with low temperature silicon oxide layer. This low temperature silicon oxide can be adapted to high resolution a-Si:H TFT LCD panels.
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