한국정보디스플레이학회:학술대회논문집
- 2005.07b
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- Pages.1103-1107
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- 2005
Single-Crystal Silicon Thin-Film Transistor on Transparent Substrates
- Wong, Man (Dept. of Electrical and Electronic Engineering. The Hong Kong University of Science and Technology) ;
- Shi, Xuejie (Dept. of Electrical and Electronic Engineering. The Hong Kong University of Science and Technology)
- Published : 2005.07.19
Abstract
Single-crystal silicon thin films on glass (SOG) and on fused-quartz (SOQ) were prepared using wafer bonding and hydrogen-induced layer transfer. Thinfilm transistors (TFTs) were subsequently fabricated. The high-temperature processed SOQ TFTs show better device performance than the low-temperature processed SOG TFTs. Tensile and compressive strain was measured respectively on SOQ and SOG. Consistent with the tensile strain, enhanced electron effective mobility was measured on the SOQ TFTs.
Keywords
- transparent substrate;
- glass;
- quartz;
- ion cutting;
- layer transfer;
- single-crystalline silicon;
- thinfilm transistor