The performance of the Co gate electrode formed by using selectively chemical vapor deposition coupled with micro-contact printing

  • Yang, Hee-Jung (School of Advanced Materials, Kookmin University) ;
  • Lee, Hyun-Min (School of Advanced Materials, Kookmin University) ;
  • Lee, Jae-Gab (School of Advanced Materials, Kookmin University)
  • Published : 2005.07.19

Abstract

A selective deposition of Co thin films for thin film transistor gate electrode has been carried out by the growth with combination of micro-contact printing and metal organic chemical vapor deposition (MOCVD). This results in the elimination of optical lithography process. MOCVD has been employed to selectively deposit Co films on preformed OTS gate pattern by using micro-contact printing (${\mu}CP$). A hydrogenated amorphous silicon TFT with a Co gate selectively formed on SAMs patterned structure exhibited a subthreshold slope of 0.88V/dec, and mobility of $0.35cm^2/V-s$, on/off current ratio of $10^6$, and a threshold voltage of 2.5V, and thus demonstrating the successful application of the novel bottom-up approach into the fabrication of a-Si:H TFTs.

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