한국정보디스플레이학회:학술대회논문집
- 2005.07b
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- Pages.1119-1122
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- 2005
The performance of the Co gate electrode formed by using selectively chemical vapor deposition coupled with micro-contact printing
- Yang, Hee-Jung (School of Advanced Materials, Kookmin University) ;
- Lee, Hyun-Min (School of Advanced Materials, Kookmin University) ;
- Lee, Jae-Gab (School of Advanced Materials, Kookmin University)
- Published : 2005.07.19
Abstract
A selective deposition of Co thin films for thin film transistor gate electrode has been carried out by the growth with combination of micro-contact printing and metal organic chemical vapor deposition (MOCVD). This results in the elimination of optical lithography process. MOCVD has been employed to selectively deposit Co films on preformed OTS gate pattern by using micro-contact printing (
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