한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Characteristics of Pentacene Organic Thin-Film Transistors with $PVP-TiO_2$ as a Gate Insulator

  • Park, Jae-Hoon (Dept. of Electrical, Information & Control Engineering, Hongik University) ;
  • Kang, Sung-In (Dept. of Electrical, Information & Control Engineering, Hongik University) ;
  • Jang, Seon-Pil (Dept. of Electrical, Information & Control Engineering, Hongik University) ;
  • Kim, Hyun-Suck (Dept. of Electrical, Information & Control Engineering, Hongik University) ;
  • Choi, Hyoung-Jin (Dept. of Polymer Science & Engineering, Inha University) ;
  • Choi, Jong-Sun (Dept. of Electrical, Information & Control Engineering, Hongik University)
  • Published : 2005.07.19
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Abstract

The performance of OTFT with $PVP-TiO_2$ composite, as a gate insulator, is reported, including the effect of surfactant for synthesizing the composite material. According to our investigation results, it was one of critical issues to prevent the aggregation of $PVP-TiO_2$ particles during the synthesis process. From this point of view, $PVP-TiO_2$ particles were treated using Tween80, as a surfactant, and we could reduce the aggregated $PVP-TiO_2$ clusters. As a result, the OTFT with the composite insulator showed the threshold voltage of about -8.3 V and the subthreshold slope of about 1.5 V/decade, which are the optimized properties compared to those of OTFTs with bare PVP, in this study. It is thought that these characteristic improvements are originated from the increase in the dielectric constant of the PVP-based insulator by compositing with high-k particles.

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