Stability of Organic Thin Film Transistors (OTFTs) with Au and ITO S/D(Source/Drain) Electrodes

In this paper, we report on the performance stability of solution processible OTFT devices with Au/Ti and ITO source-drain (S/D) electrodes. It appears that the contact resistance of the S/D electrode strongly affects the stability of OTFT devices. Interestingly, the devices with the Au/Ti electrode showed lower mobility than those with the ITO (S/D) devices. The field effect mobilities of the devices with the Au/Ti and ITO electrodes were 0.06, and $0.44cm^2/Vs$, respectively. However, the mobility of the device with the Au/Ti electrode was increased up to $0.26cm^2/Vs$ after 2 weeks, while the mobility of the device with ITO electrode was slightly decreased down to $0.41cm^2/Vs$. The experimental data show us that ITO could be used as the S/D electrode for low-cost OTFT devices.