한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Electrical Properties of Mg:Ag/tris-(8-hydroxyquinoline) Aluminum Heterointerface in Organic Light-emitting Devices

  • Choo, D.C. (Advanced Semiconductor Research Center, Department of Electronics and Computer Engineering, Hanyang University) ;
  • Im, H.C. (Advanced Semiconductor Research Center, Department of Electronics and Computer Engineering, Hanyang University) ;
  • Lee, D.U. (Advanced Semiconductor Research Center, Department of Electronics and Computer Engineering, Hanyang University) ;
  • Kim, T.W. (Advanced Semiconductor Research Center, Department of Electronics and Computer Engineering, Hanyang University) ;
  • Han, J.H. (Department of Electronic Engineering, Sejoing University)
  • Published : 2005.07.19
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Abstract

Organic molecular-beam deposition of Mg:Ag thin films with a low Mg concentration on tris (8-hydroxyquinolino) aluminum $(Alq_3)$ layers at room temperature was performed to investigate the feasibility of using Mg:Ag thin films as cathode electrodes in organic light-emitting devices (OLEDs). The effective barrier height of the $Mg:Ag/Alq_3$ heterointerface, determined from current-voltage measurements, was as low as 0.23 eV. These results help improve understanding the electrical properties of the $Mg:Ag/Alq_3$ heterointerfaces in OLEDs.

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