Characterization of ZnO:Al(AZO) Transparent Conduction Film produced by DC Magnetron Sputtering Method

  • Koo, Hong-Mo (Division of Materials Science and Engineering, Hanyang University) ;
  • Kim, Se-Hyun (Division of Materials Science and Engineering, Hanyang University) ;
  • Moon, Yeon-Keon (Division of Materials Science and Engineering, Hanyang University) ;
  • Park, Jong-Wang (Division of Materials Science and Engineering, Hanyang University) ;
  • Jeong, Chang-Ho (LCD R&D Center, Samsung Electronics Co., Ltd.)
  • Published : 2005.07.19

Abstract

Al-doped ZnO (ZnO:Al) thin films were grown on corning 1737 glass substrates by dc magnetron sputtering. The structural, electrical and optical properties of the films were investigated as a function of various discharge power. The obtained films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. The lowest resistivity is $6.0{\times}10^{-4}$ Ocm with the carrier concentration of $2.694{\times}10^{20}$ $cm^{-3}$ and Hall mobility of $20.426cm^2/Vs$. The average transmittance in the visible range was above 90%.

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