Hole Injection Layer by Ion Beam Assisted Deposition for Organic Electroluminescence Devices

The ultra thin hole injection layer (HIL) was deposited on an indium-tin-oxide (ITO) anode by using an ion beam assisted d eposition (IBAD) for the fabrication of an polymeric electroluminescence device for the first time. The device with the HIL deposited by IBAD has higher external quantum efficiency than the device with the HIL by conventional thermal evaporation. It is found that the deposited HIL by IBAD has high surface coverage on ITO anode in a few nm regions because the HIL prepared has high adatom mobility by ion beam energy.