Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.07a
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- Pages.40-41
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- 2005
Particle induced micro-scratch in CMP process
Particle 입자에 의한 CMP 마이크로 스크래치 발생 규명
- Hwang, Eung-Rim (Memory Research & Development Division, Hynix Semiconductor, Inc.) ;
- Kim, Hyung-Hwan (Memory Research & Development Division, Hynix Semiconductor, Inc.) ;
- Lee,, Hoon (Memory Research & Development Division, Hynix Semiconductor, Inc.) ;
- Pyi, Seung-Ho (Memory Research & Development Division, Hynix Semiconductor, Inc.) ;
- Choi, Bong-Ho (Memory Research & Development Division, Hynix Semiconductor, Inc.)
- 황응림 ((주) 하이닉스 메모리 연구소) ;
- 김형환 ((주) 하이닉스 메모리 연구소) ;
- 이훈 ((주) 하이닉스 메모리 연구소) ;
- 피승호 ((주) 하이닉스 메모리 연구소) ;
- 최봉호 ((주) 하이닉스 메모리 연구소)
- Published : 2005.07.07
Abstract
In this study, we proposed CMP micro-scratches generated by contaminative particle which existed on the wafer surface prior to CMP process. The CMP micro-scratches are one of the slurry abrasive related damage. To reduce the micro-scratches, research efforts have been devoted to the optimization of slurry abrasive size distribution. In addition of slurry abrasive, it was found that contaminative particles also were major CMP micro-scratch source.