Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical Properties of Nano Floating Gate Memory for Using Au and$ Au/SiO_2$ Nanoparticles

Au 및 $Au/SiO_2$ 나노입자를 이용한 나노부유게이트메모리 단일소자의 전기적 특성

  • Park, Byoung-Jun (Department of Electrical Engineering, Korea University) ;
  • Kim, Hyun-Suk (Department of Electrical Engineering, Korea University) ;
  • Cho, Kyung-Ah (Department of Electrical Engineering, Korea University) ;
  • Kim, Sang-Sig (Department of Electrical Engineering, Korea University)
  • Published : 2005.07.07
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Abstract

Au and $Au/SiO_2$ nanoparticles(NPs) were synthesized by the colloidal method. The formation of Au and $Au/SiO_2$ NPs was confirmed using high resolution transmission electron microscopy (HRTEM). Synthesized solutions were deposited on Si wafer. The electrical properties of structures were measured using a semiconductor analyzer and a LCR meter. Capacitance versus voltage hysterisis curves showed the charge storage effect by Au and $Au/SiO_2$ NPs.

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