Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical Properties of Phase Change Memory Device with Novel GST/TiAlN structure

Novel GST/TiAlN 구조를 갖는 상변화 메모리 소자의 전기적 특성

  • Lee, Nam-Yeal (Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)) ;
  • Choi, Kyu-Jeong (Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)) ;
  • Yoon, Sung-Min (Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)) ;
  • Ryu, Sang-Ouk (Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)) ;
  • Park, Young-Sam (Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)) ;
  • Lee, Seung-Yun (Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)) ;
  • Yu, Byoung-Gon (Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI))
  • 이남열 (한국전자통신연구원, 기반기술연구소) ;
  • 최규정 (한국전자통신연구원, 기반기술연구소) ;
  • 윤성민 (한국전자통신연구원, 기반기술연구소) ;
  • 류상욱 (한국전자통신연구원, 기반기술연구소) ;
  • 박영삼 (한국전자통신연구원, 기반기술연구소) ;
  • 이승윤 (한국전자통신연구원, 기반기술연구소) ;
  • 유병곤 (한국전자통신연구원, 기반기술연구소)
  • Published : 2005.07.07
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Abstract

PRAM (Phase Change Random Access Memory) is well known to use reversible phase transition between amorphous (high resistance) and crystalline (low resistance) states of chalcogenide thin film by electrical Joule heating. In this paper, we introduce a stack-type PRAM device with a novel GST/TiAlN structures (GST and a heating layer of TiAlN), and report its electrical switching properties. XRD analysis result of GST thin film indicates that the crystallization of the GST film start at about $200^{\circ}C$. Electrical property results such as I-V & R-V show that the phase change switching operation between set and reset states is observed, as various input electrical sources are applied.

Keywords