A study on MOS Characteristics of 2'nd Silicidation Process

2단계 실리사이드 형성방법에 의한 MOS 공정특성 연구

In recent years, as the needs of MOS's a high quality is desired to get the superior electrical characteristics and reliability on MOSFET. As an alternative gate dielectric have drawn considerable alternation due to their superior performance and reliability properties over MOSFET, 2'nd silicidation formation process has been proposed as a dielectric growth/annealing process. In this study the author observed process characteristics on MOS structure. In view points of the process characteristics of MOS capacitor, the oxygen & polysilicon was analyzed by SIMS analysis on l'st & 2'nd Ti process, the oxygen and Si2 contents[Count/sec] of 1.5e3 & 3.75e4 on l'st process and l.1e3 & 2.94e4 on 2'nd process, the Ti contents' of 8.2e18 & 6.5e18 on 1'st and 2'nd process. The sheet resistance[$\Omega/sq.$] was 4.5 & 4.0, the film stress[dyne/cm 2] of 1.09e10 & 1.075e10 on l'st and 2'nd process. I could achieved the superior MOS characteristics by 2'nd silicidation process.