Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

Statistical Analysis for Electrical Characteristics of $HfO_2$ Thin Films

$HfO_2$ 박막의 전기적 특성에 대한 통계적 분석

  • Lee, Jung-Hwan (Dept. of Electrical and Electronic Engineering, Yonsei University) ;
  • Kweon, Kyoung-Eun (Dept. of Electrical and Electronic Engineering, Yonsei University) ;
  • Ko, Young-Don (Dept. of Electrical and Electronic Engineering, Yonsei University) ;
  • Moon, Tae-Hyoung (Dept. of Metallurgical Engineering, Yonsei University) ;
  • Myoung, Jae-Min (Dept. of Metallurgical Engineering, Yonsei University) ;
  • Yun, Il-Gu (Dept. of Electrical and Electronic Engineering, Yonsei University)
  • 이정환 (연세대학교 전기전자공학과) ;
  • 권경은 (연세대학교 전기전자공학과) ;
  • 고영돈 (연세대학교 전기전자공학과) ;
  • 문태형 (연세대학교 금속공학과) ;
  • 명재민 (연세대학교 금속공학과) ;
  • 윤일구 (연세대학교 전기전자공학과)
  • Published : 2005.07.07
Download PDF
⟨ Previous Next ⟩

Abstract

In this paper, multiple regression analysis of the electrical characteristics for $HfO_2$ thin films grown by metal organic molecular beam epitaxy (MOMBE) was investigated. The electrical properties, such as, the accumulation capacitance and the hysteresis index, are the main factors to determine the characteristics of $HfO_2$ thin films. The input factors on the process are the substrate temperature, Ar gas flow, and $O_2$ gas flow. For statistical analysis, the design of experiments was carried out and the effect plots were used to analyze the manufacturing process. This methodology can predict the electrical characteristics of the thin film growth mechanism related to the process conditions.

Keywords