Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Preparing of the AI electrode for OLED by Sputtering Methode

스퍼터링법을 이용한 OLED용 Al 전극의 제작

  • 김경환 (경원대학교 전기정보공학과) ;
  • 금민종 (경원대학교 전기정보공학과)
  • Published : 2005.05.13
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Abstract

In this study Al electrode for OLED was deposited by FTS(Facing Targets Sputtering) system which can deposit thin films with low substrate damage. The Al thin films were deposited on the cell(LiF/EML/HTL/Bottom electrode) as a function of working gas such as Ar, Kr or mixed gas. Also Al thin films were prepared with working gas pressure (1, 6 mTorr ). The film thickness and I-V curve of Al/cell were evaluated by $\alpha$-step and semiconductor parameter (HP4156A) measurement. In the results, when Al thin film were deposited using pure Ar gas, the turn-on voltage of Al/cell was about 11[V]. And the turn-on voltage of Al/cell can be decrease to about 7[V].

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