Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Formation Temperature Dependence of Thermal Stability of Nickel Silicide with Ni-V Alloy for Nano-scale MOSFETs

  • Tuya, A. (Dept. of Electronics Engineering, Chungnam National University) ;
  • Oh, S.Y. (Dept. of Electronics Engineering, Chungnam National University) ;
  • Yun, J.G. (Dept. of Electronics Engineering, Chungnam National University) ;
  • Kim, Y.J. (Dept. of Electronics Engineering, Chungnam National University) ;
  • Lee, W.J. (Dept. of Electronics Engineering, Chungnam National University) ;
  • Ji, H.H. (Dept. of Electronics Engineering, Chungnam National University) ;
  • Zhang, Y.Y. (Dept. of Electronics Engineering, Chungnam National University) ;
  • Zhong, Z. (Dept. of Electronics Engineering, Chungnam National University) ;
  • Lee, H.D. (Dept. of Electronics Engineering, Chungnam National University)
  • Published : 2005.11.26
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Abstract

In this paper, investigated is the relationship between the formation temperature and the thermal stability of Ni silicide formed with Ni-V (Nickel Vanadium) alloy target. The sheet resistance after the formation of Ni silicide with the Ni-V showed stable characteristic up to RTP temperature of $700\;^{\circ}C$ while degradation of sheet resistance started at that temperature in case of pure-Ni. Moreover, the Ni silicide with Ni-V indicated more thermally stable characteristic after the post-silicidation annealing. It is further found that the thermal robustness of Ni silicide with Ni-V was highly dependent on the formation temperature. With the increased silicidation temperature (around $700\;^{\circ}C$), the more thermally stable Ni silicide was formed than that of low temperature case using the Ni-V.

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