RF MOSFET 을 위한 개선된 BSIM3v3 Macro 모델

Improved BSIM3v3 Macro Model for RF MOSFETs

  • 이용택 (한국외국어대학교 전자정보공학과) ;
  • 최문성 (한국외국어대학교 전자정보공학과) ;
  • 김종혁 (한국외국어대학교 전자정보공학과) ;
  • 이성현 (한국외국어대학교 전자정보공학과)
  • 발행 : 2005.11.26

초록

An improved BSIM3v3 RF Macro model with RC parallel substrate circuit has been developed to simulate RF characteristics of the output admittance in MOSFET accurately. This improved model shows better agreements with measured $Y_{22}-parameter$ up to 10 GHz than conventional one with a single substrate resistance, verifying the accuracy of the improved one.

키워드