Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2005.11a
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- Pages.747-750
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- 2005
A Low-Power Level Shifter Using Low Temperature Poly-Si TFTs
저온 Poly-Si TFT를 이용한 저소비전력 레벨 쉬프터
- Ahn, Jeong-Keun (Division of Electrical and Computer Engineering, Hanyang University) ;
- Choi, Byong-Deok (Division of Electrical and Computer Engineering, Hanyang University) ;
- Kwon, Oh-Kyong (Division of Electrical and Computer Engineering, Hanyang University)
- Published : 2005.11.26
Abstract
In this paper, we propose a new level shifter circuit for reducing power consumption. The concept of the proposed level shifter is to use capacitive coupling effect to reduce short circuit current. The power consumption of the proposed level shifter is reduced up to 50%, compared to the conventional level shifter. Especially the proposed level shifter circuit works well with low temperature poly-Si (LTPS) TFTs. It can operate on low input voltage even with low-mobility, high and widely-varying threshold voltage of LTPS TFT.
Keywords