Electrical characteristics of Field Effect Thin Film Transistors with p-channels of CdTe/CdHgTe Core-Shell Nanocrystals

CdTe/CdHgTe 코어쉘 나노입자를 이용한 P채널 전계효과박막트렌지스터의 전기적특성

Electrical characteristics of field-effect thin film transistors (TFTs) with p-channels of CdTe/CdHgTe core-shell nanocrystals are investigated in this paper. For the fabrication of bottom- and top-gate TFTs, CdTe/CrHgTe nanocrystals synthesized by colloidal method are first dispersed on oxidized p+ Si substrates by spin-coating, the dispersed nanoparticles are sintered at $150^{\circ}C$ to form the channels for the TFTs, and $Al_{2}O_{3}$ layers are deposited on the channels. A representative bottom-gate field-effect TFT with a bottom-gate $SiO_2$ layer exhibits a mobility of $0.21cm^2$/ Vs and an Ion/Ioff ratio of $1.5{\times}10^2$ and a representative top-gate field-effect TFT with a top-gate $Al_{2}O_{3}$ layer provides a field-effect mobility of $0.026cm^2$/ Vs and an Ion/Ioff ratio of $2.5{\times}10^2$. $Al_{2}O_{3}$ was deposited for passivation of CdTe/CdHgTe core-shell nanocrystal layer, resulting in enhanced hole mobility, Ior/Ioff ratio by 0.25, $3{\times}10^3$, respectively. The CdTe/CdHgTe nanocrystal-based TFTs with bottom- and top gate geometries are compared in this paper.