A Design of CMOS Subbandgap Reference using Pseudo-Resistors

가상저항을 이용한 CMOS Subbandgap 기준전압회로 설계

This paper describes a CMOS sub-bandgap reference using Pseudo-Resistors which can be widely used in flash memory, DRAM, ADC and Power management circuits. Bandgap reference circuit operates weak inversion for reducing power consumption and uses Pseudo-Resistors for reducing the chip area, instead of big resistor. It is implemented in 0.35um Standard 1P4M CMOS process. The temperature coefficient is 5ppm/$^{\circ}C$ from $40^{\circ}C$ to $100^{\circ}C$ and minimum power supply voltage is 1.2V The core area is 1177um${\times}$617um. Total current is below 2.8uA and output voltage is 0.598V at $27^{\circ}C$.