Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Conductivity Characteristics of ${Ge_1}{Se_1}{Te_2}$ Amorphous Chalcogenide Thin Film for the Phase-Change Memory Application

상변화 메모리 응용을 위한 ${Ge_1}{Se_1}{Te_2}$ 비정질 칼코게나이드 박막의 전도 록성

  • Choi, Hyuk (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Kim, Hyun-Gu (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Cho, Won-Ju (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Chung, Hong-Bay (Department of Electronic Materials Engineering, Kwangwoon University)
  • 최혁 (광운대학교 전자재료공학과) ;
  • 김현구 (광운대학교 전자재료공학과) ;
  • 조원주 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과)
  • Published : 2006.10.27
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Abstract

As next generation nonvolatile memory, chalcogenide-based phase change memory can substitute for a conventional flash memory from its high performance. Also, fast writing speed, low writing voltage, high sensing margin, low power consumption and repetition reliability over $10^{15}$ cycle shows its possibility. At our laboratory, we invented ${Ge_1}{Se_1}{Te_2}$ material to alternate with conventional ${Ge_2}{Sb_2}{Te_5}$ for improve its ability. We respect the ${Ge_1}{Se_1}{Te_2}$ material can be a solution for high power consumption problem and long time at 'set' performance. A conductivity experiment from variable temperature was performed to see reliability of repetition at read and write performance. Compare with conventional ${Ge_2}{Sb_2}{Te_5}$ material, these two materials are used as complex compound to get the finest parameter.

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