Improvement in Characteristics of Thin Film Transistors by High Pressure Steam Annealing

  • Nagasawa, Y. (Ishikawajima-Harima Heavy Industries Co.,Ltd.) ;
  • Yamamoto, N. (Ishikawajima-Harima Heavy Industries Co.,Ltd.) ;
  • Chishina, H. (Ishikawajima-Harima Heavy Industries Co.,Ltd.) ;
  • Ogawa, H. (Ishikawajima-Harima Heavy Industries Co.,Ltd.) ;
  • Kawasaki, Y. (Ishikawajima-Harima Heavy Industries Co.,Ltd.)
  • Published : 2006.08.22

Abstract

High Pressure Annealing System was developed to improve the characteristics of low-temperature poly-silicon thin film transistors.. (TFTs). The high-pressure steam annealing was applied to the poly-silicon film made by rapid thermal annealing method. The carrier lifetime was investigated by Microwave detection of the Photo-Conductive Decay and the increase of carrier lifetime which indicates the reduction of the defect was observed by high-pressure steam annealing of 1MPa 600C 1hour.

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