Thin Film Transistor (TFT) Pixel Design for AMOLED

  • Han, Min-Koo (School of Electrical Engineering, Seoul National University) ;
  • Lee, Jae-Hoon (School of Electrical Engineering, Seoul National University) ;
  • Nam, Woo-Jin (School of Electrical Engineering, Seoul National University)
  • Published : 2006.08.22

Abstract

Highly stable thin-film transistor (TFT) pixel employing both low temperature polycrystalline silicon (LTPS) and amorphous silicon (a-Si) for active matrix organic light emitting diode (AMOLED) is discussed. ELA (excimer laser annealing) LTPS-TFT pixel should compensate $I_{OLED}$ variation caused by the non-uniformity of LTPS-TFT due to the fluctuation of excimer laser energy and amorphous silicon TFT pixel is desired to suppress the decrease of $I_{OLED}$ induced by the degradation of a-Si TFT. We discuss various compensation schemes of both LTPS and a-Si TFT employing the voltage and the current programming.

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