50nm thick as-deposited poly silicon as an active layer of TFT for driving AM-OLEDs prepared at low temperature $(<200^{\circ}C)$ using Cat-CVD

The influence of various process parameters for the as-deposited poly silicon was investigated. The polycrystalline silicon films were successfully deposited on glass substrates at a low-temperature $(<200^{\circ}C)$ using the catalytic chemical vapor deposition (Cat-CVD). We achieved a low hydrogen content $({\sim}0.9%)$ and a high deposition rate $({\sim}35{\AA}/sec)$. The film is applicable to thin film transistors on plastic substrates.