Analysis of transport properties of SLS polysilicon TFTs

An investigation of the transport properties of polysilicon TFTs, using sequential laterally solidified, SLS, material, is presented. This material has a location controlled distribution of grain boundaries, GBs, which makes it particularly useful for the analysis of their influence on the performance of polysilicon TFTs, and to address the issue of the role of spatially localised trapping states. The experimental results were analyzed by using numerical simulations, and the effective medium approximation was compared with a discrete grain model.