한국정보디스플레이학회:학술대회논문집
- 2006.08a
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- Pages.597-600
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- 2006
Forming Low-Resistivity Electrodes of Thin Film Transistors with Selective Electroless Plating Process
- Chiang, Shin-Chuan (Taiwan TFT-LCD Association) ;
- Chuang, Bor-Chuan (Taiwan TFT-LCD Association) ;
- Tsai, Chia-Hao (Taiwan TFT-LCD Association) ;
- Chang, Shih-Chieh (Taiwan TFT-LCD Association) ;
- Hsiao, Ming-Nan (Taiwan TFT-LCD Association) ;
- Huang, Yuan-Pin (Taiwan TFT-LCD Association) ;
- Huang, Chih-Ya (Taiwan TFT-LCD Association)
- Published : 2006.08.22
Abstract
The silver gate and source/drain electrodes for an a-Si thin film transistor were fabricated by the selective electroless plating (SELP) process. Relevant physical properties including taper angle, uniformity and resistivity are investigated. The Ag layer was about 150nm to 250nm thick, the resistivity less than
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