Fabrication of Solution Processed Thin Film Transistor Using Zinc Oxide Nanoparticles

  • Lee, Sul (Department of Materials Science and Engineering, Yonsei University) ;
  • Jeong, Sun-Ho (Department of Materials Science and Engineering, Yonsei University) ;
  • Kim, Dong-Jo (Department of Materials Science and Engineering, Yonsei University) ;
  • Park, Bong-Kyun (Department of Materials Science and Engineering, Yonsei University) ;
  • Moon, Joo-Ho (Department of Materials Science and Engineering, Yonsei University)
  • Published : 2006.08.22

Abstract

Zinc oxide nanocrystals are attractive candidates for a solution-processable semiconductor for high performance thin film field effect transistors. We have studied ZnO thin film transistor fabricated by solution process and have improved $V_{th}$ by controlling the ZnO ink additives. Synthesized ZnO nanoparticles of 30nm were dispersed in solvent to make the ZnO ink. ZnO ink was spin coated on silicon wafer and after heat treatment electrodes were patterned.

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