한국정보디스플레이학회:학술대회논문집
- 2006.08a
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- Pages.718-722
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- 2006
Effect of Density-of-States (DOS) Parameters on the N-channel SLS Poly-Si TFT Characteristics
- Ryu, Myung-Kwan (Research Center, BOE HYDIS TECHNOLOGY Co. Ltd) ;
- Kim, Eok-Su (Research Center, BOE HYDIS TECHNOLOGY Co. Ltd) ;
- Son, Gon (Research Center, BOE HYDIS TECHNOLOGY Co. Ltd) ;
- Lee, Jung-Yeal (Research Center, BOE HYDIS TECHNOLOGY Co. Ltd)
- Published : 2006.08.22
Abstract
The dependence of n-channel 2 shot SLS poly-Si TFT characteristics on the DOS (density of states) parameters was investigated by using a device simulation. Device performances were most sensitive to the DOS of poly-Si/gate insulator (GI) interface and poly-Si active layer. Deep level states at the poly-Si/GI interfaces strongly affect the subthreshold slope.
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