한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Reverse annealing of $P^+/B^+$ ion shower doped poly-Si

  • Jin, Beop-Jong (Department of Material Science and Engineering, Hongik University) ;
  • Hong, Won-Eui (Department of Material Science and Engineering, Hongik University) ;
  • Ro, Jae-Sang (Department of Material Science and Engineering, Hongik University)
  • Published : 2006.08.22
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Abstract

Reverse annealing was observed in $P^+/B^+$ ion shower doped poly-Si upon activation annealing. Phosphorous or boron was implanted by ion shower doping using a source gas mixture of $PH_3/H_2$ or $B_2H_6/H_2$. Activation annealing was conducted using a tube furnace in the temperature ranges from $350^{\circ}C$ to $650^{\circ}C$. Hall measurement revealed that reverse annealing begins at different annealing temperatures for poly-Si implanted with P and B, respectively. It was observed that reverse annealing starts at $550^{\circ}C$$ in $P^+$ ion shower doped poly-Si, while at $350^{\circ}C$ in the case of B-doping.

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