Texture Analysis of Directionally-Solidified Si Films Obtained via Line-Scan SLS

  • Chitu, A.M. (Program in Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, Columbia University) ;
  • Wilt, P.C. Van Der (Program in Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, Columbia University) ;
  • Chung, U.J. (Program in Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, Columbia University) ;
  • Turk, B.A. (Program in Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, Columbia University) ;
  • McCreary, V.M. (Program in Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, Columbia University) ;
  • Limanov, A.B. (Program in Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, Columbia University) ;
  • Im, James S. (Program in Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, Columbia University)
  • Published : 2006.08.22

Abstract

Directionally solidified Si films obtained via line-scan SLS can lead to attainment of high-mobility TFTs. The crystallographic texture of the resultant materials can potentially be an important factor because the spatial details thereof may impact the overall device uniformity. Here, we present EBSD analysis of these materials that reveal the existence of relatively large domains with different textures and differing amounts of defects, which in turn, may adversely affect device uniformity.

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