한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
권호 표지

Improving performance of deep-blue OLED by inserting ultra-thin LiF between hole-blocking and electron-transporting layers

  • Sun, J.X. (Dept. of Electronic and Computer Engineering, The Hong Kong University of Science and Technology) ;
  • Zhu, X.L. (Dept. of Electronic and Computer Engineering, The Hong Kong University of Science and Technology) ;
  • Yu, X.M. (Dept. of Electronic and Computer Engineering, The Hong Kong University of Science and Technology) ;
  • Wong, M. (Dept. of Electronic and Computer Engineering, The Hong Kong University of Science and Technology) ;
  • Kwok, H.S. (Dept. of Electronic and Computer Engineering, The Hong Kong University of Science and Technology)
  • Published : 2006.08.22
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Abstract

Deep-blue organic light-emitting diodes (OLEDs) with/without ultra-thin LiF layer inserted at the interface between hole-blocking and electron-transporting layers have been fabricated and investigated. The fundamental structures of the OLEDs are ITO/m-MTDATA/NPB/BCP/LiF (with/ without)/ $Alq_3/LiF/Al.Deep$ blue light emission with CIE coordinate of (0.15, 0.11) has been achieved for all devices. Further, by inserting LiF with thickness of 1nm at the interface between BCP and $Alq_3$ layer, the luminous efficiency as well as the power efficiency is much improved compared to that without. The enhancement of electron injection due to insertion of LiF may account for this improvement.

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