Effects of $HfO_x$ treated indium tin oxide on organic emitting diodes

  • Sohn, Sun-Young (Dept. of Physics, Institute of Basic Science, Brain Korea 21 Physics Research Division, Sungkyunkwan University) ;
  • Park, Keun-Hee (Dept. of Physics, Institute of Basic Science, Brain Korea 21 Physics Research Division, Sungkyunkwan University) ;
  • Jung, Dong-Geun (Dept. of Physics, Institute of Basic Science, Brain Korea 21 Physics Research Division, Sungkyunkwan University) ;
  • Kim, Hyoung-Sub (School of Advanced Materials and Engineering, Sungkyunkwan University)
  • Published : 2006.08.22

Abstract

The surface of ITO in OLEDs was treated with $HfO_x$ deposition process using an atomic layer chemical vapor deposition system. The treatment at room temperature for 5 cycles exhibited significantly improved electroluminescent characteristics compared to the OLEDs without any treatment, which is believed to be caused by the increased holes injection efficiency.

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