한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Development of high performance near-ultraviolet OLEDs based on the Double Wide Band Gap Emissive Layers

  • Kim, Young-Min (College of Engineering, Display and Nanosystem Lab., Korea Univ., Korea Institute of Science and Technology, Opto Electronic Materials Research Center) ;
  • Park, Young-Wook (College of Engineering, Display and Nanosystem Lab., Korea Univ.) ;
  • Choi, Jin-Hwan (College of Engineering, Display and Nanosystem Lab., Korea Univ.) ;
  • Kim, Jai-kyeong (Korea Institute of Science and Technology, Opto Electronic Materials Research Center) ;
  • Ju, Byeong-Kwon (College of Engineering, Display and Nanosystem Lab., Korea Univ.)
  • Published : 2006.08.22
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Abstract

Organic light-emitting diodes (OLEDs) based on the double wide band gap emissive layers in the range of 380 nm to 440 nm are reported. An efficient electroluminescence with a maximum at 400nm was observed at room temperature under a forward bias about 10V. With the wide band gap organic materials for near-ultraviolet emission, the low operating voltage (5V) and high current efficiency (3 cd/A) have been obtained at $2mA/cm^2$

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