Preparation of $PMMA-co-MMA/TiO_2$ Composite Film by Sol-Gel Process and Its Application to OTFTs as a Gate Insulator

  • Park, Jae-Hoon (Dept. of Electrical, Information & Control Engineering, Hongik University) ;
  • Kim, Hyun-Suck (Dept. of Electrical, Information & Control Engineering, Hongik University) ;
  • Bong, Kang-Wook (Dept. of Electrical, Information & Control Engineering, Hongik University) ;
  • June, Bong (Dept. of Electrical, Information & Control Engineering, Hongik University) ;
  • Choi, Hyoung-Jin (Dept. of Polymer Science & Engineering, Inha University) ;
  • Choi, Jong-Sun (Dept. of Electrical, Information & Control Engineering, Hongik University)
  • Published : 2006.08.22

Abstract

In this study, nanocomposite layer composed of PMMA-co-MMA and $TiO_2$ was prepared by sol-gel process using TTIP as a precursor and was utilized as a gate insulator of OTFTs. The composite insulator provides the lower threshold voltage and the enhanced sub threshold slope of OTFTs mainly due to its higher dielectric constant than that of the bare PMMA-co-MMA. Consequently, it is demonstrated that the sol-gel process can open an interesting direction for the fabrication of high-performance OTFTs, and contribute for OTFTs to be feasible for real applications.

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